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| BZX85-C12 ZENER DIODES PRODUCT SUMMARY VZ range: 3.6 to 200 Volts Power dissipation: 1.3W FEATURES Silicon Planar Power Zener Diodes. For use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Replace suffix "C" with "B" for 2% tolerance. Other voltage tolerances and other Zener voltages are available upon request. MECHANICAL DATA Case: DO-41Glass Case Weight: approx. 0.35g Pb-free; RoHS-compliant MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Zener current (see Table "Characteristics") Power dissipation at Tamb=25oC Thermal resistance junction to ambient air Junction temperature Storage temperature range Ptot RJA Tj TS 1.3 130 (1) o Symbol Value Unit W o (1) C/W o 175 -55 to +175 C C o Notes: 1. Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature. 07/05/2007 Rev.1.00 www.SiliconStandard.com 1 BZX85-C12 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Maximum VF=1.0V at IF=200mA Temp. coefficient of z ener voltage at IZ=IZT vz (% / oC) at IZK (mA) 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Min. - 0.08 - 0.08 - 0.08 - 0.08 - 0.07 - 0.05 - 0.03 - 0.01 0 +0.01 +0.015 +0.02 +0.03 +0.035 +0.04 +0.045 +0.045 +0.05 +0.055 +0.055 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 +0.06 0.055 0.055 0.055 0.055 0.055 0.055 0.055 0.055 0.055 0.050 0.050 0.050 Max. - 0.06 - 0.06 - 0.06 - 0.05 - 0.02 +0.01 +0.04 +0.04 +0.045 +0.055 +0.06 +0.065 +0.07 +0.075 +0.08 +0.08 +0.085 +0.085 +0.09 +0.09 +0.09 +0.09 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 +0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 0.095 o Type number y=C for +5% y=B for +2% BZX85 - y2V7 BZX85 - y3V0 BZX85 - y3V3 BZX85 - y3V6 BZX85 - y3V9 BZX85 - y4V3 BZX85 - y4V7 BZX85 - y5V1 BZX85 - y5V6 BZX85 - y6V2 BZX85 - y6V8 BZX85 - y7V5 BZX85 - y8V2 BZX85 - y9V1 BZX85 - y10 BZX85 - y11 BZX85 - y12 BZX85 - y13 BZX85 - y15 BZX85 - y16 BZX85 - y18 BZX85 - y20 BZX85 - y22 BZX85 - y24 BZX85 - y27 BZX85 - y30 BZX85 - y33 BZX85 - y36 BZX85 - y39 BZX85 - y43 BZX85 - y47 BZX85 - y51 BZX85 - y56 BZX85 - y62 BZX85 - y68 BZX85 - y75 BZX85 - y82 BZX85 - y91 BZX85 - y100 BZX85 - y110 BZX85 - y120 BZX85 - y130 BZX85 - y150 BZX85 - y160 BZX85 - y180 BZX85 - y200 Dynamic resistance rZT (3) () < 20 < 20 < 20 < 15 < 15 < 13 < 13 < 10 <7 <4 < 3.5 <3 <5 <5 <7 <8 <9 < 10 < 10 < 15 < 20 < 24 < 25 < 25 < 30 < 30 < 35 < 40 < 50 < 50 < 90 < 115 < 120 < 125 < 130 < 135 < 200 < 250 < 350 < 450 < 550 < 700 < 1000 < 1100 < 1200 < 1500 at IZT (mA) 60 60 60 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 8 8 6 6 4 4 4 4 4 4 2.7 2.7 2.7 2.7 2 2 2 1.5 1.5 1.5 rZK (3) () < 400 < 400 < 400 < 500 < 500 < 500 < 600 < 500 < 400 < 300 < 300 < 200 < 200 < 200 < 200 < 300 < 350 < 400 < 500 < 500 < 500 < 600 < 600 < 600 < 750 < 1000 < 1000 < 1000 < 1000 < 1000 < 1500 < 1500 < 2000 < 2000 < 2000 < 2000 < 3000 < 3000 < 3000 < 4000 < 4500 < 5000 < 6000 < 6500 < 7000 < 8000 Reverse leakage current at IR (uA) < 20 < 10 <3 <3 <1 <1 <1 <1 <1 <1 <1 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 < 0.5 at VR (Volts) 1 1 1 1 1 1 1 1.5 2 3 4 4.5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 Admissible z ener current (2) IZ (mA) 290 280 250 215 200 190 170 155 140 130 120 105 97 88 79 71 66 62 56 52 47 41 36 33 30 28 26 23 21 19 16 15 14 12 10 9.4 8.6 7.8 7.0 6.4 5.8 5.2 4.7 at tp=10ms IZSM (mA) 2660 2540 2440 2320 2200 2080 1960 1800 1620 1520 1340 1200 1100 1000 900 760 700 600 540 500 450 400 380 350 320 296 270 246 226 208 186 171 161 141 127 116 105 96 89 77 72 64 58 Notes: 1. Measured with pulses tp=5 ms 2. Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case 3. Measured with f=1 kHz 07/05/2007 Rev.1.00 www.SiliconStandard.com 2 BZX85-C12 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) o Type number + 5% Tol. BZX85-C2V7 BZX85-C3V0 BZX85-C3V3 BZX85-C3V6 BZX85-C3V9 BZX85-C4V3 BZX85-C4V7 BZX85-C5V1 BZX85-C5V6 BZX85-C6V2 BZX85-C6V8 BZX85-C7V5 BZX85-C8V2 BZX85-C9V1 BZX85-C10 BZX85-C11 BZX85-C12 BZX85-C13 BZX85-C15 BZX85-C16 BZX85-C18 BZX85-C20 BZX85-C22 BZX85-C24 BZX85-C27 BZX85-C30 BZX85-C33 BZX85-C36 BZX85-C39 BZX85-C43 BZX85-C47 BZX85-C51 BZX85-C56 BZX85-C62 BZX85-C68 BZX85-C75 BZX85-C82 BZX85-C91 BZX85-C100 BZX85-C110 BZX85-C120 BZX85-C130 BZX85-C150 BZX85-C160 BZX85-C180 BZX85-C200 Zener voltage range (1) at IZ VZ (Volts) Min. 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.40 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 77.0 85.0 94.0 104 114 1 24 138 153 168 188 Max. 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 80.0 87.0 96.0 106 116 127 141 156 171 191 212 Test current IZ (mA) 60 60 60 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8.0 8.0 8.0 8.0 6.0 6.0 4.0 4.0 4.0 4.0 4.0 4.0 2.7 2.7 2.7 2.7 2.0 2.0 2.0 1.5 1.5 1.5 Notes: 1. Measured with pulses tp=5 ms 07/05/2007 Rev.1.00 www.SiliconStandard.com 3 BZX85-C12 RATINGS AND CHARACTERISTIC CURVES (TA=25 C unless otherwise noted) o 07/05/2007 Rev.1.00 www.SiliconStandard.com 4 BZX85-C12 RATINGS AND CHARACTERISTIC CURVES (TA=25 C unless otherwise noted) o 07/05/2007 Rev.1.00 www.SiliconStandard.com 5 BZX85-C12 RATINGS AND CHARACTERISTIC CURVES (TA=25 C unless otherwise noted) o Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 07/05/2007 Rev.1.00 www.SiliconStandard.com 6 |
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